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Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy
In this work, we report the spontaneous formation of superlattice structures in nominal InGaN
films grown by plasma-assisted molecular beam epitaxy. A 700-nm-thick self-assembled In …
films grown by plasma-assisted molecular beam epitaxy. A 700-nm-thick self-assembled In …
MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity
ScAlMgO4 (SAM) is a promising substrate material for group III-nitride semiconductors. SAM
has a lower lattice mismatch with III-nitride materials compared to conventionally used …
has a lower lattice mismatch with III-nitride materials compared to conventionally used …
Study of pore geometry and dislocations in porous GaN based pseudo-substrates using TEM
Nitride based light emitting diodes (LEDs) have demonstrated very high efficiency in the
blue and green wavelength ranges. For full color LED based displays, efficient and small …
blue and green wavelength ranges. For full color LED based displays, efficient and small …
Stimulation of Biological Structures on the Nanoscale Using Interfaces with Large Built-In Spontaneous Polarizations
The electric potential stimulation of biological structures in aqueous environments is well-
known to be a result of the gating of voltage-gated ion channels. Such voltage-gated ion …
known to be a result of the gating of voltage-gated ion channels. Such voltage-gated ion …
Demonstration of 82% relaxed In0. 18Ga0. 82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy
In this study, the impact of InGaN film thickness and different compositionally graded
structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) …
structures on InGaN relaxation grown on tiled GaN-on-porous-GaN pseudo substrates (PSs) …
[LIBRO][B] Molecular Beam Epitaxy for New Generation Nitride Devices
CD Wurm - 2022 - search.proquest.com
Although MOCVD is regarded as the preferred growth method for commercial grade nitride-
based semiconductor devices, there are still certain applications for which MBE may be …
based semiconductor devices, there are still certain applications for which MBE may be …