Building brain-inspired logic circuits from dynamically switchable transition-metal oxides

JL Andrews, DA Santos, M Meyyappan, RS Williams… - Trends in Chemistry, 2019 - cell.com
Processing, storing, and transmitting information accounts for∼ 10% of global energy use;
projections suggest that computational energy demands will be 10× higher than the …

Filament-free memristors for computing

S Choi, T Moon, G Wang, JJ Yang - Nano Convergence, 2023 - Springer
Memristors have attracted increasing attention due to their tremendous potential to
accelerate data-centric computing systems. The dynamic reconfiguration of memristive …

Lifshitz transition and frustration of magnetic moments in infinite-layer upon hole do**

I Leonov, SL Skornyakov, SY Savrasov - Physical Review B, 2020 - APS
Motivated by the recent discovery of superconductivity in infinite-layer (Sr, Nd) NiO 2 films
with Sr content x≃ 0.2 [D. Li, Nature (London) 572, 624 (2019) NATUAS 0028-0836 …

Verwey-Type Charge Ordering and Site-Selective Mott Transition in Fe4O5 under Pressure

S Layek, E Greenberg, S Chariton… - Journal of the …, 2022 - ACS Publications
The metal–insulator transition driven by electronic correlations is one of the most
fundamental concepts in condensed matter. In mixed-valence compounds, this transition is …

Generalized way to make temperature tunable conductor–insulator transition liquid metal composites in a diverse range

S Chen, HZ Wang, XY Sun, Q Wang, XJ Wang… - Materials …, 2019 - pubs.rsc.org
Liquid materials with the ability to transit between conductor and insulator are of great
scientific and practical significance. However, achieving the conduction of a liquid metal …

Spin density wave, charge density wave, and bond disproportionation wave instabilities in hole-doped infinite-layer

KG Slobodchikov, IV Leonov - Physical Review B, 2022 - APS
Using ab initio band structure methods and DFT+ dynamical mean-field theory approach we
explore the possible formation of spin and charge stripes in the Ni–O plane of hole-doped …

Ab Initio Full Cell for Correlated Materials

T Zhu, GKL Chan - Physical Review X, 2021 - APS
The quantitative prediction of electronic properties in correlated materials requires
simulations without empirical truncations and parameters. We present a method to achieve …

Metal-insulator transition and local-moment collapse in negative charge transfer under pressure

I Leonov - Physical Review B, 2022 - APS
We compute the electronic structure, spin and charge state of Fe ions, and the structural
phase stability of paramagnetic CaFeO 3 under pressure using a fully self-consistent in …

Emergence of quantum critical charge and spin-state fluctuations near the pressure-induced Mott transition in MnO, FeO, CoO, and NiO

I Leonov, AO Shorikov, VI Anisimov, IA Abrikosov - Physical Review B, 2020 - APS
We perform a comprehensive theoretical study of the pressure-induced evolution of the
electronic structure, magnetic state, and phase stability of the late transition metal …

Effect of lattice strain on the electronic structure and magnetic correlations in infinite-layer (Nd, Sr) NiO2

I Leonov - Journal of Alloys and Compounds, 2021 - Elsevier
We report a theoretical study of the effect of electron-electron interactions and Sr do** on
the electronic structure of infinite-layer (Nd, Sr) NiO 2 using the DFT+ dynamical mean-field …