The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

Point defects affect or even completely determine physical and chemical properties of
semiconductors. Characterization of point defects based on experimental techniques alone …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …

Recent developments in theoretical techniques have significantly improved the predictive
power of density-functional-based calculations. In this review, we discuss how such …

We develop a practical first-principles methodology to determine nonradiative carrier
capture coefficients at defects in semiconductors. We consider transitions that occur via …

GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …

Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …