Recent progress in quantum cascade lasers and applications

C Gmachl, F Capasso, DL Sivco… - Reports on progress in …, 2001 - iopscience.iop.org
Quantum cascade (QC') lasers are reviewed. These are semiconductor injection lasers
based on intersubband transitions in a multiple-quantum-well (QW) heterostructure …

[BOOK][B] Phonons in nanostructures

MA Stroscio, M Dutta - 2001 - books.google.com
This book focuses on the theory of phonon interactions in nanoscale structures with
particular emphasis on modern electronic and optoelectronic devices. The continuing …

Long-wavelength unipolar semiconductor laser in GaAs quantum wells

O Gauthier-Lafaye, P Boucaud, FH Julien… - Applied physics …, 1997 - pubs.aip.org
A unipolar semiconductor laser emitting in the mid-infrared spectral region is demonstrated.
The laser scheme relies on a simple three-level system in GaAs/AlGaAs asymmetric coupled …

Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

A Vardi, N Akopian, G Bahir, L Doyennette… - Applied physics …, 2006 - pubs.aip.org
We fabricated a communication wavelength photodetector based on intraband transition in
Ga N∕ Al N self-assembled quantum dot heterostructures. The quantum dot photodetector …

Electrically pumped tunable terahertz emitter based on intersubband transition

B Xu, Q Hu, MR Melloch - Applied physics letters, 1997 - pubs.aip.org
An electrically pumped three-level system was designed and fabricated using an
AlGaAs/GaAs multiple quantum well structure. Under appropriate biases, the structure emits …

Near-Infrared Optical Gain of Colloidal Quantum Wells via Intraband Transitions

BT Diroll, RD Schaller - ACS Photonics, 2024 - ACS Publications
Tunable, unipolar, near-infrared intraband optical gain is demonstrated in semiconductor
colloidal quantum wells, expanding the form and optical range for potential infrared …

Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature

L Nevou, M Tchernycheva, FH Julien, F Guillot… - Applied physics …, 2007 - pubs.aip.org
The authors report the observation of room-temperature intersubband luminescence at λ=
2.13 μ m from Ga N∕ Al N quantum wells under optical pum** at λ= 0.98 μ m⁠. The …

Intersubband electron-electron scattering in asymmetric quantum wells designed for far-infrared emission

P Kinsler, P Harrison, RW Kelsall - Physical Review B, 1998 - APS
Population inversion in inter-subband emitters and lasers depends critically on the lifetimes
of the nonradiative inter-subband transitions. We find that the often neglected Auger-type …

High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability

O Gauthier-Lafaye, FH Julien, S Cabaret… - Applied physics …, 1999 - pubs.aip.org
We demonstrate operation of a high-power quantum fountain unipolar laser relying on
intersubband emission in optically pumped GaAs/AlGaAs quantum wells. The collected …

A dual-phase architecture for efficient amplified spontaneous emission in lead iodide perovskites

ARS Kandada - Journal of Materials Chemistry C, 2016 - pubs.rsc.org
Multi-particle Auger interactions are one of the major intrinsic limiting factors for lasing
applications of lead halide perovskites. In this communication, we report a possible way to …