Impact of the hole gas on optically detected magnetic resonance in -based quantum wells

A Łopion, A Bogucki, M Raczyński, Z Śnioch… - Physical Review B, 2025 - APS
Optically detected magnetic resonance (ODMR) is a useful technique for studying
interactions between local spins (magnetic ions) and the carrier gas. We present an ODMR …

High-Frequency EPR and ENDOR Spectroscopy of Mn2+ Ions in CdSe/CdMnS Nanoplatelets

RA Babunts, YA Uspenskaya, NG Romanov… - ACS …, 2023 - ACS Publications
Semiconductor colloidal nanoplatelets based of CdSe have excellent optical properties.
Their magneto-optical and spin-dependent properties can be greatly modified by …

Carrier localization in defected areas of (Cd, Mn) Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale

A Dydniański, A Łopion, M Raczyński… - Solid State …, 2025 - Elsevier
In this work, we study the impact of carrier localization on three quantities sensitive to carrier
gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free …

Magnetic ion relaxation time distribution within a quantum well

A Łopion, A Bogucki, W Kraśnicki, KE Połczyńska… - Physical Review B, 2022 - APS
Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to
study the local deformation of the crystal lattice around magnetic ion as well as the ion spin …

Strain-induced speed-up of Mn spin-lattice relaxation in (Cd,Mn)Te/(Cd,Mg)Te quantum wells: a time-resolved ODMR study

A Bogucki, A Łopion, KE Połczyńska, W Pacuski… - arxiv preprint arxiv …, 2024 - arxiv.org
This study examines the spin-lattice relaxation rate of Mn $^{2+} $ ions in strained diluted
magnetic semiconductor (Cd, Mn) Te/(Cd, Mg) Te quantum wells using the optically detected …

[KSIĄŻKA][B] Wpływ naprężenia na relaksację spinową jonów magnetycznych w nanostrukturach półprzewodnikowych

A Bogucki - 2023 - repozytorium.uw.edu.pl
W pracy opisano badania czasów relaksacji spinowej jonów magnetycznych wbudowanych
w nanostruktury półprzewodnikowe. Zastosowanie nanostruktur półprzewodnikowych …