The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate
dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of …

High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …

We report on frequency dependent capacitance and conductance analysis of the
AlGaN/GaN/Si heterostructure field-effect transistors (HFETs) and Al 2 O 3/AlGaN/GaN/Si …

Enhancement-mode metal oxide semiconductor field effect transistors (MOSFETs) with
trench gate structures have been developed. These MOSFETs show excellent DC …

In the present work, we have investigated the current–voltage (I–V) and capacitance–
voltage (C–V) characteristics of Au/SiO 2/n-GaN metal–insulator–semiconductor (MIS) …

We report on the interface properties of thermally oxidized n-GaN metal–oxide–
semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga 2 O 3 was …

Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were
controllably produced under varying conditions and subsequently analyzed. The thermal …

Gallium nitride (GaN) has attracted much attention due to its outstanding characteristics. It
may replace conventional semiconductor materials, such as silicon, that are approaching …

(2 01)-oriented β-Ga 2 O 3∕ Ga N thin films were epitaxially grown by pulsed laser
deposition. These films have the specific in-plane orientation, which was confirmed by φ …

Abstract Gallium oxide (Ga 2 O 3) and gallium nitride (GaN) are fourth-and third-generation
semiconductor materials, respectively. Their heterogeneous structure (lattice mismatch of …