Resistive switching behaviour of amorphous silicon carbide thin films fabricated by a single...

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Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices

N Arun, LDV Sangani, K Vinod Kumar… - Journal of Materials …, 2021 - Springer
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO
2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion …
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Impact of crystallinity on coexistence of negative differential resistance (NDR) and write once read many (WORM) resistive switching memory in multiferroic BiFeO3 …

C Prakash, AK Yadav, A Dixit - Applied Physics A, 2023 - Springer
The materials exhibiting the negative differential resistance (NDR) and write once read
many (WORM), simultaneously are potential candidates for electronic devices such as …
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