Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess
a gapless Dirac-like band structure. We report a comprehensive study on gated and optically …

Abstract Complex sulfides BaDyCuS 3, BaHoCuS 3 and BaYbCuS 3 were synthesized in a
flow of sulfiding gases (CS 2, H 2 S) at 900 о C from standard solutions of lanthanide and …

We report on systematic study of transport properties of a 1000 nm HgTe film. Unlike thinner
and strained HgTe films, which are known as high-quality three-dimensional topological …

Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large range of
unusual physical properties, from an insulator via a two-dimensional Dirac semimetal to a …

We report on a detailed study of terahertz (THz) photoresistivity in a strained HgTe three-
dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction …

High mobility two-dimensional systems with superposed 1D lateral periodic potentials
exhibit characteristic commensurability (Weiss) oscillations that reflect the interplay of the …

Spin-orbit coupling in thin HgTe quantum wells results in a relativistic-like electron band
structure, making it a versatile solid state platform to observe and control nontrivial …

We explore electrical transport through a point contact in strained HgTe, a three-dimensional
topological insulator. In the absence of a magnetic field $ B $, there is no quantization …

Abstract Topological Insulators (TIs) have become new potential materials because of their
super surface conduction and bulk insulation. Their technological importance motivated us …

Valence and conduction bands and the bandgap in between these bands determine the
electronic properties of solids. For semiconductors, the band structure of the conduction …