Recent progress in ohmic contacts to silicon carbide for high-temperature applications
Z Wang, W Liu, C Wang - Journal of Electronic Materials, 2016 - Springer
During the past few decades, silicon carbide (SiC) has emerged as the most promising wide-
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …
Ni‐Based Ohmic Contacts to n‐Type 4H‐SiC: The Formation Mechanism and Thermal Stability
The fabrication of low‐resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC
Studying the temperature dependence of the electrical properties of Ohmic contacts formed
on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of …
on ion-implanted SiC layers is fundamental to understand and to predict the behaviour of …
The thermal stability study and improvement of 4H-SiC ohmic contact
S Liu, Z He, L Zheng, B Liu, F Zhang, L Dong… - Applied Physics …, 2014 - pubs.aip.org
The thermal stability of the standard Ni/SiC and a TiW/Ni/SiC Ohmic contacts was
investigated and compared after being aged at 400 C in the N 2 atmosphere. The Ohmic …
investigated and compared after being aged at 400 C in the N 2 atmosphere. The Ohmic …
Bias-temperature instabilities in 4H-SiC metal–oxide–semiconductor capacitors
Bias-temperature instabilities (BTIs) are investigated for n-and p-substrate 4H-SiC metal–
oxide–semiconductor (MOS) capacitors. The midgap voltage (V_\rmmg) shifts positively …
oxide–semiconductor (MOS) capacitors. The midgap voltage (V_\rmmg) shifts positively …
Photoelectric, optical and microstructural characterization of thin palladium silicide (Pd2Si) layers fabricated by magnetron sputtering from a stoichiometric target
K Piskorski, M Wzorek, M Ekielski, L Dobrzański… - Materials Science and …, 2022 - Elsevier
The properties of thin Pd 2 Si layers fabricated by means of magnetron sputtering deposition
from a stoichiometric target was examined. Optical parameters were determined using …
from a stoichiometric target was examined. Optical parameters were determined using …
[HTML][HTML] Electrical properties of Cu/Pd2Si Schottky contacts to AlGaN/GaN-on-Si HEMT heterostructures
M Wzorek, M Ekielski, E Brzozowski, A Taube - Materials Science in …, 2023 - Elsevier
In this study, we analyze gold-free Cu/Pd 2 Si Schottky contacts to AlGaN/GaN-on-Si HEMT
(high electron mobility transistor) heterostructures. The silicide layers are fabricated through …
(high electron mobility transistor) heterostructures. The silicide layers are fabricated through …
Ni/W/Ni ohmic contacts for both n-and p-type 4H-SiC
D Bae, G Ahn, C Jeong, K Kim - Electrical Engineering, 2018 - Springer
In this study, we used a Ni/W/Ni-layered structure to provide low-resistive ohmic contacts
with good thermal stability for both n-type and p-type 4H-SiC. As reference, we used Ni and …
with good thermal stability for both n-type and p-type 4H-SiC. As reference, we used Ni and …
Improved microstructure and ohmic contact of Nb electrode on n-type 4H-SiC
K Jung, Y Sutou, J Koike - Thin Solid Films, 2012 - Elsevier
Niobium was deposited as an electrode material on an n-type SiC wafer for power device
application. The reaction microstructure and electrical contact property were investigated …
application. The reaction microstructure and electrical contact property were investigated …
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
The thermal degradation of Au/Ni2Si/n-SiC ohmic contact was investigated after long-time
aging in air at 400° C or rapid thermal annealing in Ar up to 700° C. Current–voltage …
aging in air at 400° C or rapid thermal annealing in Ar up to 700° C. Current–voltage …