Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Semiconductor nanowire (NW) solar cells with a single pn junction have exhibited efficiency
comparable to that of their planar counterparts with a substantial reduction in material …

Avalanche photodetectors (APDs) are key components in optical communication systems
due to their increased photocurrent gain and short response time as compared to …

We present processed light emitting diodes (LED) devices based on GaInP core-branch
nanowire (NW) structures. The LEDs rely on the charge carrier diffusion induced light …

Thin vertical nanowires based on III–V compound semiconductors are viable candidates as
channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to …

Nanowires offer unprecedented flexibility as nanoscale building blocks for future
optoelectronic devices, especially with respect to nanowire solar cells and light-emitting …

Abstract III− V nanowire (NW) photovoltaic devices promise high efficiencies at reduced
materials usage. However, research has so far focused on small devices, mostly≤ 1 mm 2 …

Nanowire solar cells have the potential to reach the same efficiencies as the world-record III–
V solar cells while using a fraction of the material. For solar energy harvesting, large-area …

Nanowire based solar cells have attracted great attention due to their potential for high
efficiency and low device cost. Photovoltaic devices based on InP nanowires now have …

To harvest the benefits of III–V nanowires in optoelectronic devices, the development of
ternary materials with controlled do** is needed. In this work, we performed a systematic …