Magnetic field sensors are an integral part of many industrial and biomedical applications,
and their utilization continues to grow at a high rate. The development is driven both by new …

Spintronic and nanomagnetic devices often derive their functionality from layers of different
materials and the interfaces between them. We discuss the opportunities that arise from …

In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …

Synthetic antiferromagnets (SAFs), formed through an interlayer antiferromagnetic exchange
coupling of ferromagnetic layers, exhibit intriguing potential in next‐generation spintronic …

Junction size (D) dependence of thermal stability (Δ) factor and intrinsic critical current (I C0)
were investigated for MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel …

This paper is focused on thermally assisted magnetic random access memories (TA-
MRAMs). It explains how the heating produced by Joule dissipation around the tunnel …

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to
antiferromagnets with the additional benefit of being imaged and read-out through …

Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy
CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer …

The successful fabrication of ultra‐thin films of CoFeB/Pt with strong perpendicular magnetic
anisotropy and antiferromagnetic interfacial interlayer coupling on flexible polyimide …

The ability to engineer the interactions in assemblies of nanoscale magnets is central to the
development of artificial spin systems and spintronic technologies. Following the emergence …