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Theoretical prediction of semiconductor-free negative differential resistance tunnel diodes with high peak-to-valley current ratios based on two-dimensional cold …
The negative differential resistance (NDR) tunnel diodes are promising alternative devices
for beyond-CMOS (complementary metal oxide semiconductor) computing because they …
for beyond-CMOS (complementary metal oxide semiconductor) computing because they …
Computational design of tunnel diodes with negative differential resistance and ultrahigh peak-to-valley current ratio based on two-dimensional cold metals: The case …
Cold metals have recently gained attention as a promising platform for innovative devices,
such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors …
such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors …
Urbach tails in indium arsenide studied using nonequilibrium Green's functions
The analysis presented in this paper results in new formulas for the Urbach tail parameter,
which are supposed to be valid for III-V compounds. They were derived based on numerical …
which are supposed to be valid for III-V compounds. They were derived based on numerical …
Generalized Boltzmann relations in semiconductors including band tails
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier
densities as a function of the Fermi level and temperature. However, these simple …
densities as a function of the Fermi level and temperature. However, these simple …
Physics and performances of III–V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom …
We report the capability to simulate in a quantum-mechanical atomistic fashion record-large
nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 …
nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 …
Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes
Discrepancies exist between the theoretically predicted and experimentally measured
performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect …
performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect …
[HTML][HTML] Tunneling between density-of-state tails: Theory and effect on Esaki diodes
A model for tunneling between conduction and valence band tail states in semiconductors is
developed. Localized, lifetime-broadened wave functions originally proposed by Vinogradov …
developed. Localized, lifetime-broadened wave functions originally proposed by Vinogradov …
Correlation effects in two-dimensional and (, ; , , ; , ; , ) cold metals: Implications for device applications
Cold metals, characterized by their distinctive band structures, hold promise for innovative
electronic devices such as tunnel diodes with negative differential resistance (NDR) effect …
electronic devices such as tunnel diodes with negative differential resistance (NDR) effect …
Spin gapped metals: A novel class of materials for multifunctional spintronic devices
Gapped metals, a recently proposed class of materials, possess a band gap slightly above
or below the Fermi level, behaving as intrinsic p-or n-type semiconductors without requiring …
or below the Fermi level, behaving as intrinsic p-or n-type semiconductors without requiring …
A novel gate-normal tunneling field-effect transistor with dual-metal gate
S Glass, K Kato, L Kibkalo, JM Hartmann… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
In this combined experiment and simulation study we investigate a SiGe/Si based gate-
normal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling …
normal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling …