Roadmap of terahertz imaging 2021

G Valušis, A Lisauskas, H Yuan, W Knap, HG Roskos - Sensors, 2021 - mdpi.com
In this roadmap article, we have focused on the most recent advances in terahertz (THz)
imaging with particular attention paid to the optimization and miniaturization of the THz …

Terahertz integrated electronic and hybrid electronic–photonic systems

K Sengupta, T Nagatsuma, DM Mittleman - Nature Electronics, 2018 - nature.com
The field of terahertz integrated technology has undergone significant development in the
past ten years. This has included work on different substrate technologies such as III–V …

Terahertz imaging and sensing applications with silicon-based technologies

P Hillger, J Grzyb, R Jain… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Traditional terahertz (THz) equipment faces major obstacles in providing the system cost
and compactness necessary for widespread deployment of THz applications. Because of …

A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

A 1 k-pixel video camera for 0.7–1.1 terahertz imaging applications in 65-nm CMOS

R Al Hadi, H Sherry, J Grzyb, Y Zhao… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
A 1 k-pixel camera chip for active terahertz video recording at room-temperature has been
fully integrated in a 65-nm CMOS bulk process technology. The 32× 32 pixel array consists …

SiGe HBT with fx/fmax of 505 GHz/720 GHz

B Heinemann, H Rücker, R Barth… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
An experimental SiGe HBT technology featuring fT/fmax/BVCEO= 505 GHz/720 GHz/1.6 V
and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed …

SiGe HBT technology: Future trends and TCAD-based roadmap

M Schröter, T Rosenbaum, P Chevalier… - Proceedings of the …, 2016 - ieeexplore.ieee.org
A technology roadmap for the electrical performance of high-speed silicon-germanium
(SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results …

High-power radiation at 1 THz in silicon: A fully scalable array using a multi-functional radiating mesh structure

Z Hu, M Kaynak, R Han - IEEE Journal of Solid-State Circuits, 2018 - ieeexplore.ieee.org
We introduce a highly scalable architecture of coherent harmonic oscillator array for high-
power and narrow-beamwidth radiation in the mid-terahertz (THz) band. The array consists …

Half-terahertz sige bicmos technology

H Rücker, B Heinemann, A Fox - 2012 IEEE 12th Topical …, 2012 - ieeexplore.ieee.org
This paper addresses the integration of a new generation of high-speed SiGe HBTs with f T/f
max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm …

Active 220-and 325-GHz frequency multiplier chains in an SiGe HBT technology

E Öjefors, B Heinemann… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
A 325-GHz× 18 frequency multiplier chain implemented in af τ/f max= 250 GHz/380 GHz
evaluation SiGe heterojunction bipolar transistor technology is presented. The chain …