(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Recent demonstrations of room-temperature lasing in optically pumped GeSn show promise
for future CMOS compatible lasers for Si-photonics applications. However, challenges …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

The electronic structure of highly mismatched semiconductor alloys is characterized by
carrier localization and strongly influenced by the local alloy microstructure. First-principles …

Aqueous manganese ion batteries hold potential for stationary storage applications owing to
their merits in cost, energy density, and environmental sustainability. However, the …

Group IV alloys have been long viewed as homogeneous random solid solutions since
perceiving them as Si-compatible, direct-band gap semiconductors 30 years ago. Such a …

Abstract Germanium-on-silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs)
have recently emerged as a promising detector candidate for ultra-sensitive and picosecond …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

This work introduces a comprehensive simulation tool that provides a robust 1D Schrödinger–
Poisson solver for modeling the electrostatics of heterostructures with an arbitrary number of …