This paper presents the characterization of a thick gate oxide MOSFET for radiotherapy in-
vivo dosimetry. The device is an N-channel transistor fabricated in a standard CMOS …

Interface degradation-induced shifts of MOSFET thermal coefficients and zero temperature
coefficient current (IZTC) were studied by monitoring the interface traps (N it) growth in a …

In this paper we review the main aspects of MOS dosimetry. MOS dosimeters have been
used for the last 50 years, and its performance has improved since then. To understand how …

The design and characterization of an ionizing radiation sensor for radiotherapy applications
based on floating gate structures are presented. The devices were fabricated in a …

The offset of a Miller amplifier is mainly due to an imperfect matching between its inputs.
When the input transistors are MOSFETs, the exposure to ionizing radiation affect the …

We evaluate the use of thick buried oxide (BOX) of fully depleted silicon-on-insulator (FD-
SOI) transistors for total ionizing dose (TID) measurements in a radiotherapy application …

In this paper, two pulse-based injection methods are employed for charging/discharging a
floating gate transistor, specially designed to work as dosimeter in radiotherapy applications …

A physics-based numerical model is proposed as a simulation tool to predict the total
ionizing dose response of CMOS integrated circuits. The model includes the radiation …

In this paper, a Floating Gate transistor designed and fabricated to be used as a radiation
sensor is presented, and the charge injection process through an injection electrode is …

Due to the demand of aerospace applications, radiation-hard techniques have become
critical for power IC. In order to compensate the total ionizing dose (TID) effect on the circuits …