In a 300mm industrial Reduced Pressure–Chemical Vapour Deposition tool we have
assessed the advantages and drawbacks of disilane for the low temperature growth of Si …

Recent breakthroughs in Ge 1− x Sn x and Si y Ge 1− x− y Sn x materials and devices have
created much excitement within the photonics research community. Group IV …

Low-pressure chemical vapor deposition of silicon–germanium and its SPC below are
investigated. The effects of precursor ratio [], pressure, and temperature are examined with …

Ge nanoparticles embedded in an oxide matrix have been obtained by (a) steam thermal
oxidation at 650 C of polycrystalline SiGe layers and (b) deposition of discontinuous Ge …

This work demonstrates the viability of direct fabrication utilizing a single (deposition/anneal)
process for polycrystalline silicon germanium sub-micro particles. The process combines …

The luminescence emission of structures containing Ge nanocrystals embedded in a
dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been …

Amorphous SiGe nanoparticles embedded in an oxide matrix, with controlled composition,
diameter of a few nm, located in the same plane and with an areal density above 1012 cm–2 …

Grazing incidence RBS has been tested as a technique to detect and characterize SiGe
nanoparticles embedded in a SiO2 matrix. Suitable structures were deposited by low …

A reversible ordered state induced by the combined action of above band-gap light and
temperature in a-Si 1− x Ge x layers with 0⩽ x< 0.38 is reported. The experimental …

We have studied the effect of the current density (J) and etching time in the formation of
porous poly-SiGe (pp-SiGe) layers, with Ge fractions in the 0 to 0.55 range, by …