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Overview of radiation induced point defects in silica-based optical fibers
Silica-based optical fibers, fiber-based devices and optical fiber sensors are today
integrated in a variety of harsh environments associated with radiation constraints. Under …
integrated in a variety of harsh environments associated with radiation constraints. Under …
Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5
Understanding the relation between the time-dependent resistance drift in the amorphous
state of phase-change materials and the localised states in the band gap of the glass is …
state of phase-change materials and the localised states in the band gap of the glass is …
Structure, Properties, and Applications of Silica Nanoparticles: Recent Theoretical Modeling Advances, Challenges, and Future Directions
Silica nanoparticles (SNPs), one of the most widely researched materials in modern science,
are now commonly exploited in surface coatings, biomedicine, catalysis, and engineering of …
are now commonly exploited in surface coatings, biomedicine, catalysis, and engineering of …
A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling
Despite extensive experimental and theoretical studies, the atomistic mechanisms
responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood …
responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood …
Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Uncertainty and irreproducibility of triboelectricity based on interface mechanochemistry
Triboelectrification mechanism is still not understood, despite centuries of investigations.
Here, we propose a model showing that mechanochemistry is key to elucidate …
Here, we propose a model showing that mechanochemistry is key to elucidate …
[HTML][HTML] Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture
C Wilhelmer, D Waldhoer, M Jech… - Microelectronics …, 2022 - Elsevier
Experiments as well as theoretical calculations indicate that point defects in the amorphous
SiO 2 layer of electronic devices as well as in optical fibers are responsible for numerous …
SiO 2 layer of electronic devices as well as in optical fibers are responsible for numerous …