Overview of radiation induced point defects in silica-based optical fibers

S Girard, A Alessi, N Richard, L Martin-Samos… - Reviews in Physics, 2019 - Elsevier
Silica-based optical fibers, fiber-based devices and optical fiber sensors are today
integrated in a variety of harsh environments associated with radiation constraints. Under …

Dielectric breakdown of oxide films in electronic devices

A Padovani, P La Torraca, J Strand, L Larcher… - Nature Reviews …, 2024 - nature.com
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

A Mehonic, AL Shluger, D Gao, I Valov… - Advanced …, 2018 - Wiley Online Library
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence

W Goes, Y Wimmer, AM El-Sayed, G Rzepa… - Microelectronics …, 2018 - Elsevier
It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5

K Konstantinou, FC Mocanu, TH Lee… - Nature …, 2019 - nature.com
Understanding the relation between the time-dependent resistance drift in the amorphous
state of phase-change materials and the localised states in the band gap of the glass is …

Structure, Properties, and Applications of Silica Nanoparticles: Recent Theoretical Modeling Advances, Challenges, and Future Directions

B McLean, I Yarovsky - Small, 2024 - Wiley Online Library
Silica nanoparticles (SNPs), one of the most widely researched materials in modern science,
are now commonly exploited in surface coatings, biomedicine, catalysis, and engineering of …

A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

A Padovani, DZ Gao, AL Shluger… - Journal of Applied physics, 2017 - pubs.aip.org
Despite extensive experimental and theoretical studies, the atomistic mechanisms
responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood …

Low-frequency noise in nanowires

DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …

Uncertainty and irreproducibility of triboelectricity based on interface mechanochemistry

G Fatti, H Kim, C Sohn, M Park, Y Lim, Z Li, KI Park… - Physical Review Letters, 2023 - APS
Triboelectrification mechanism is still not understood, despite centuries of investigations.
Here, we propose a model showing that mechanochemistry is key to elucidate …

[HTML][HTML] Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture

C Wilhelmer, D Waldhoer, M Jech… - Microelectronics …, 2022 - Elsevier
Experiments as well as theoretical calculations indicate that point defects in the amorphous
SiO 2 layer of electronic devices as well as in optical fibers are responsible for numerous …