The future of two-dimensional semiconductors beyond Moore's law

KS Kim, J Kwon, H Ryu, C Kim, H Kim, EK Lee… - Nature …, 2024 - nature.com
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Design of the synergistic rectifying interfaces in Mott–Schottky catalysts

D Xu, SN Zhang, JS Chen, XH Li - Chemical Reviews, 2022 - ACS Publications
The functions of interfacial synergy in heterojunction catalysts are diverse and powerful,
providing a route to solve many difficulties in energy conversion and organic synthesis …

Approaching the quantum limit in two-dimensional semiconductor contacts

W Li, X Gong, Z Yu, L Ma, W Sun, S Gao, Ç Köroğlu… - Nature, 2023 - nature.com
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Ballistic two-dimensional InSe transistors

J Jiang, L Xu, C Qiu, LM Peng - Nature, 2023 - nature.com
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Two-dimensional devices and integration towards the silicon lines

S Wang, X Liu, M Xu, L Liu, D Yang, P Zhou - Nature materials, 2022 - nature.com
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

L Liu, T Li, L Ma, W Li, S Gao, W Sun, R Dong, X Zou… - Nature, 2022 - nature.com
Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …

Van der Waals heterostructures

A Castellanos-Gomez, X Duan, Z Fei… - Nature Reviews …, 2022 - nature.com
The integration of dissimilar materials into heterostructures has become a powerful tool for
engineering interfaces and electronic structure. The advent of 2D materials has provided …

2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Y **a, X Chen, J Wei, S Wang, S Chen, S Wu, M Ji… - Nature Materials, 2023 - nature.com
Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides,
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …

Ultralow contact resistance between semimetal and monolayer semiconductors

PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park… - Nature, 2021 - nature.com
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …