The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

High dielectric constant (high-κ) gate dielectrics compatible with two-dimensional (2D)
semiconductors are essential for scaled optoelectronic devices. However, conventional …

Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …

The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces
challenges such as interface imperfection and gate current leakage for an ultrathin silicon …

Large-scale growth and heterogeneous integration with existing semiconductors are the
main obstacles to the application of metal halide perovskites in optoelectronics. Herein, a …

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal
structures have been attracting enormous research interest for their atomic thickness …

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …

Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …