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Electrical phase-change memory: fundamentals and state of the art
M Terao, T Morikawa, T Ohta - Japanese Journal of Applied …, 2009 - iopscience.iop.org
Phase-change random access memory (PRAM) technology is reviewed. PRAM uses the
phase change between the amorphous state and the crystalline state caused by Joule …
phase change between the amorphous state and the crystalline state caused by Joule …
Ultrafast Threshold Switching Dynamics in Phase‐Change Materials
Discovery of electrical switching in chalcogenide glasses by SR Ovshinsky paves a new
path for develo** high‐speed nonvolatile electronic memory and high‐performance …
path for develo** high‐speed nonvolatile electronic memory and high‐performance …
Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers
KA Campbell, CM Anderson - Microelectronics Journal, 2007 - Elsevier
Non-volatile memory devices with two stacked layers of chalcogenide materials comprising
the active memory device have been investigated for their potential as phase-change …
the active memory device have been investigated for their potential as phase-change …
Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for Phase Change Memory applications
N Bhatt, S Parveen, A Whab… - Journal of Physics D …, 2024 - iopscience.iop.org
Chalcogenide alloy-based semiconductors have gained significant attention in recent
decades due to its applications in phase change memory (PCM). Sb2Te3 has proven to be …
decades due to its applications in phase change memory (PCM). Sb2Te3 has proven to be …
Forced ion migration for chalcogenide phase change memory device
KA Campbell - US Patent 7,924,608, 2011 - Google Patents
US PATENT DOCUMENTS 6,646,902 B2 11/2003 Gilton et al. 6,784,018 B2 8/2004
Campbell et al. 6,795,338 B2 9, 2004 Parkinson et al. 6,812,087 B2 11/2004 Giltom et al …
Campbell et al. 6,795,338 B2 9, 2004 Parkinson et al. 6,812,087 B2 11/2004 Giltom et al …
Electrical switching and topological thresholds in Ge-Te and Si-Te glasses
Abstract Melt-quenched Ge x Te 100-x glasses and Si x Te 100-x glasses (15≤ x≤ 25)
have been found to exhibit memory switching, with threshold fields of the order of 4–11 …
have been found to exhibit memory switching, with threshold fields of the order of 4–11 …
Phenomenology of electrical switching behavior of SeTeSnCd thin films for memory applications
The objective of the present research is to investigate the consequences of the incorporation
of a small amount of Cd on the electrical switching behavior at high electric field 10 4 V/cm in …
of a small amount of Cd on the electrical switching behavior at high electric field 10 4 V/cm in …
Composition dependent electrical switching in GexSe35− xTe65 (18≤ x≤ 25) glasses–the influence of network rigidity and thermal properties
Electrical switching investigations and supportive thermal studies have been undertaken on
semiconducting chalcogenide GexSe35− xTe65 (18≤ x≤ 25) glasses prepared in bulk …
semiconducting chalcogenide GexSe35− xTe65 (18≤ x≤ 25) glasses prepared in bulk …
Resistive switching devices based on nanocrystalline solid electrolyte (AgI) 0.5 (AgPO3) 0.5
Resistive switching devices with a sandwich structure Ag∕(Ag I) 0.5 (Ag PO 3) 0.5∕ Pt were
fabricated on silicon (001) wafer by using the pulsed laser deposition method and the …
fabricated on silicon (001) wafer by using the pulsed laser deposition method and the …
Anomalous electrical switching behaviour in phase-separated bulk Ge–Se–Ag chalcogenide glasses
Abstract Bulk, Se-rich Ge 0.15 Se 0.85− x Ag x (0⩽ x⩽ 0.20) glasses show anomalous
electrical switching behaviour which is attributed to difference in the thermal conductivities of …
electrical switching behaviour which is attributed to difference in the thermal conductivities of …