The coupling of electron channeling contrast imaging (ECCI) with electron backscatter
diffraction (EBSD) provides an efficient and fast approach to perform ECCI of crystal defects …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope
(SEM) is a rapid and non-destructive structural characterisation technique for imaging …

We describe the use of electron channeling contrast imaging in the scanning electron
microscope to rapidly and reliably image and identify threading dislocations (TDs) in …

We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown
GaN substrates and demonstrate that their curvature is consistent with a compressive to …

This paper describes the dynamical simulation of electron channeling contrast images
(ECCIs) of dislocations. The approach utilizes both the Bloch wave formalism and the …

The interest in belite (Ca 2 SiO 4+ impurities or dopants) phase increases significantly since
new types of clinkers based essentially on this phase become promising alternatives to …

Collection of selected area channeling patterns (SACPs) on a high resolution FEG-SEM is
essential to carry out quantitative electron channeling contrast imaging (ECCI) studies, as it …

In this work, the relative capabilities and limitations of electron channeling contrast imaging
(ECCI) and cross-correlation electron backscattered diffraction (CC-EBSD) have been …

The defect structures of three different orientation ([001],[011] and [111]) shocked single
crystals of tantalum have been characterised using scanning electron microscopy and …