With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance
degradation originates from short channel effects (SCEs) degradation and power …

With the size of devices continuously shrinking, power consumption has become one of the
most critical issues concerning modern integrated circuits, which can be reduced by …

The Silicon cold source field-effect transistor (CSFET) offers a compelling solution for low-
power logic devices due to its ability to achieve sub-60 mV/dec steep-slope switching with …

Electron-phonon (e-ph) scattering is a key effect in quantum transport and electronic device
physics which is, however, often neglected in atomistic device simulation due to its …

Si-based cold source field-effect transistor (CSFET) combines the benefits of sub-60-mV/dec
steep-slope switching, high current, and compatibility with current Si CMOS process …

Recently, the cold source field-effect transistor (CSFET) has emerged as a promising
solution to overcome Boltzmann tyranny in its ballistic regime, offering a steep-slope …

Carbon nanotubes (CNTs), as a 1-D material, have become a favorable material for
replacing Silicon to continue Moore's law. Herein, we propose a gate-all-around cold source …

Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS)< 60
mV/decade has been proposed to overcome Boltzmann tyranny in its ballistic regime …

Moore's law predicts an exponential growth of the number of transistors on integrated
circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it …

In the quest of higher performance, the next generation electronic devices are required to be
lower power-consumption. Due to the unique properties, two-dimensional (2D) materials …