Gate-pulse-induced recombination, known as charge pum** (CP), is a fundamental
carrier recombination process, and has been utilized as a method for analyzing the electrical …

Recent observations of macroscopic quantum condensation using electron-hole (eh)
bilayers have activated the research of its application to electronics. However, to the best of …

A novel single-pulse charge pum** (SPCP) method was proposed and implemented to
profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors …

In this article, we report on the single pulse charge pum** (SPCP) measurements as a
method to extract the interface trap density () on the GaN metal–oxide–semiconductor high …

This paper presents the separated single pulse charge pum** (SSPCP) technique, an
improvement over conventional single pulse charge pum** (CSPCP) for analyzing metal …

Understanding interface properties in MoS 2 field effect transistors with a high-k gate
insulator is critical for improving the performance of the device. Here, by applying the time …

Traditional charge pum** (CP) technique relies on trap-assisted recombination from the
source/drain to the body contact to characterize interface trap density () of classical bulk …

This paper reviews the evolution of the charge pum** (CP) technique and its applications
from the micrometer-scale to the atomic-scale device era. We describe the more significant …

To analyze the charge pum** (CP) sequence in detail, the source/drain electron current
and the substrate hole current under the CP mode of transistors are simultaneously …

Time-domain charge pum**, which monitors transient currents during the charge pum**
process, was applied to silicon-on-insulator (SOI) MOS gated p–i–n diodes. We found that …