Electronic Transport and Quantum Phenomena in Nanowires
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …
electronic quantum transport experiments. We review recent progress on the synthesis of …
InAsSb-based infrared photodetectors: Thirty years later on
In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …
infrared detectors. During the last thirty years, many scientific breakthroughs and …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Temperature dependence of semiconductor band gaps
KP O'donnell, X Chen - Applied physics letters, 1991 - pubs.aip.org
The application of a simple three‐parameter fit to the temperature dependence of
semiconductor band gaps is justified on both practical and theoretical grounds. In all trials …
semiconductor band gaps is justified on both practical and theoretical grounds. In all trials …
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
RM Feenstra - Physical Review B, 1994 - APS
Results of tunneling spectroscopy measurements of the (110) cleaved surface of GaAs, InP,
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …
Parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductors
R Pässler - physica status solidi (b), 1999 - Wiley Online Library
The temperature dependencies of the fundamental energy gaps of group‐IV, III–V, and II–VI
materials are fitted by means of a relatively simple analytical four‐parameter expression …
materials are fitted by means of a relatively simple analytical four‐parameter expression …
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
Al 2 O 3 is a promising material for use as a dielectric in metal-oxide-semiconductor devices
based on III-V compound semiconductors. However, the presence of deep levels and fixed …
based on III-V compound semiconductors. However, the presence of deep levels and fixed …
Basic model relations for temperature dependencies of fundamental energy gaps in semiconductors
R Pässler - physica status solidi (b), 1997 - Wiley Online Library
Novel analytical models describing the temperature dependencies of fundamental energy
gaps in semiconductors are shown to be consistent with basic equations due to the electron …
gaps in semiconductors are shown to be consistent with basic equations due to the electron …
Single-crystalline InGaAs nanowires for room-temperature high-performance near-infrared photodetectors
H Tan, C Fan, L Ma, X Zhang, P Fan, Y Yang, W Hu… - Nano-micro letters, 2016 - Springer
InGaAs is an important bandgap-variable ternary semiconductor which has wide
applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires …
applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires …
Model GW band structure of and in the wurtzite phase
We report quasiparticle calculations of the newly observed wurtzite polymorph of InAs and
GaAs. The calculations are performed in the GW approximation (based on a model dielectric …
GaAs. The calculations are performed in the GW approximation (based on a model dielectric …