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Self-powered photodetector with low dark current based on the InSe/β-Ga 2 O 3 heterojunctions
Solar-blind photodetectors play an important role in many fields of solar-blind ultraviolet
(UV) photodetection such as missile tracking and fire warning. A high-performance self …
(UV) photodetection such as missile tracking and fire warning. A high-performance self …
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3
The optical absorption coefficient is one of the fundamental properties of semiconductors
and is critical to the development of optical devices. Herein, a revival of the constant …
and is critical to the development of optical devices. Herein, a revival of the constant …
Growth and UV detection properties of Sb-doped β-Ga2O3 microbelts based on seed layer
QJ Feng, JH Shi, YH Yang, CT Zhang, JD Liu, XY Yao… - Optical Materials, 2025 - Elsevier
A layer of Sb-doped β-Ga 2 O 3 seed layer was grown on a sapphire substrate using CVD
method, and then large-area and high yield Sb-doped β-Ga 2 O 3 microbelts were prepared …
method, and then large-area and high yield Sb-doped β-Ga 2 O 3 microbelts were prepared …
Fabrication of Tapered and Cylindrical GaN Nanowires Using Nanosphere Lithography
Nanowires fabricated using the top-down method can offer high uniformity and precise
morphology. However, achieving well-controlled dry and wet etching processes is essential …
morphology. However, achieving well-controlled dry and wet etching processes is essential …