Self-powered photodetector with low dark current based on the InSe/β-Ga 2 O 3 heterojunctions

YQ Wang, S Zhao, HY **ao, JZ Wang, PA Hu… - Journal of Materials …, 2024‏ - pubs.rsc.org
Solar-blind photodetectors play an important role in many fields of solar-blind ultraviolet
(UV) photodetection such as missile tracking and fire warning. A high-performance self …

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

D Nicol, S Reynolds, K Barr, JW Roberts… - … status solidi (b), 2024‏ - Wiley Online Library
The optical absorption coefficient is one of the fundamental properties of semiconductors
and is critical to the development of optical devices. Herein, a revival of the constant …

Growth and UV detection properties of Sb-doped β-Ga2O3 microbelts based on seed layer

QJ Feng, JH Shi, YH Yang, CT Zhang, JD Liu, XY Yao… - Optical Materials, 2025‏ - Elsevier
A layer of Sb-doped β-Ga 2 O 3 seed layer was grown on a sapphire substrate using CVD
method, and then large-area and high yield Sb-doped β-Ga 2 O 3 microbelts were prepared …

Fabrication of Tapered and Cylindrical GaN Nanowires Using Nanosphere Lithography

E Akar, BC Da Silva, M Knebel… - 2024 IEEE 24th …, 2024‏ - ieeexplore.ieee.org
Nanowires fabricated using the top-down method can offer high uniformity and precise
morphology. However, achieving well-controlled dry and wet etching processes is essential …