Reduced dielectric loss and leakage current in CaCu3Ti4O12/SiO2/CaCu3Ti4O12 multilayered films
L Fang, M Shen, J Yang, Z Li - Solid State Communications, 2006 - Elsevier
The CaCu3Ti4O12/SiO2/CaCu3Ti4O12 (CCTO/SiO2/CCTO) multilayered films were
prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition method. It has been …
prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition method. It has been …
Enhanced tunable properties of Ba0. 6Sr0. 4TiO3 thin films grown on Pt∕ Ti∕ SiO2∕ Si substrates using MgO buffer layers
W Zhu, J Cheng, S Yu, J Gong, Z Meng - Applied physics letters, 2007 - pubs.aip.org
Ba 0.6 Sr 0.4 Ti O 3 (BST) thin films were prepared on MgO buffered Pt (111)∕ Ti∕ Si O 2∕
Si substrates by pulsed laser deposition. The crystallographic structure, interface …
Si substrates by pulsed laser deposition. The crystallographic structure, interface …
Leakage mechanism of Ba0. 8Sr0. 2TiO3/ZrO2 multilayer thin films
SK Sahoo, D Misra, DC Agrawal… - Journal of applied …, 2010 - pubs.aip.org
The temperature and field dependence of the IV characteristics of Ba 0.8 Sr 0.2 TiO 3 thin
films and Ba 0.8 Sr 0.2 TiO 3/ZrO 2 multilayer thin films on Pt/Ti/SiO 2/Si substrates are …
films and Ba 0.8 Sr 0.2 TiO 3/ZrO 2 multilayer thin films on Pt/Ti/SiO 2/Si substrates are …
Dielectric and leakage current properties of sol–gel derived calcium copper titanate (CCTO) thin films and CCTO/ZrO2 multilayers
Dielectric properties and I–V characteristics of sol–gel prepared calcium copper titanate
(CCTO) thin films and CCTO/ZrO2 multilayers on Pt/Ti/SiO2/Si substrates are investigated …
(CCTO) thin films and CCTO/ZrO2 multilayers on Pt/Ti/SiO2/Si substrates are investigated …
Effect of photon irradiation on structural, dielectric, and insulating properties of Ba0. 60Sr0. 40TiO3 thin films
The effect of ultraviolet (UV) photon assisted annealing on the structural, dielectric, and
insulating properties of barium strontium titanate (BST) thin films was investigated …
insulating properties of barium strontium titanate (BST) thin films was investigated …
Nanocomposite thin films for miniaturized multi-layer ceramic capacitors prepared from barium titanate nanoparticle based hybrid solutions
T Schneller, S Halder, R Waser, C Pithan… - journal of Materials …, 2011 - pubs.rsc.org
In the present work a flexible approach for the wet chemical processing of nanocomposite
functional thin films is demonstrated. Barium titanate (BTO) based nanocomposite thin films …
functional thin films is demonstrated. Barium titanate (BTO) based nanocomposite thin films …
Improved dielectric properties and their temperature insensitivity in multilayered Ba0. 8Sr0. 2TiO3/ZrO2 thin films
SK Sahoo, D Misra, M Sahoo, CA MacDonald… - Journal of Applied …, 2011 - pubs.aip.org
The electrical and dielectric properties of Ba 0.8 Sr 0.2 TiO 3 thin films and Ba 0.8 Sr 0.2 TiO
3/ZrO 2 multilayer thin films deposited on Pt/Ti/SiO 2/Si substrates by sol-gel method are …
3/ZrO 2 multilayer thin films deposited on Pt/Ti/SiO 2/Si substrates by sol-gel method are …
Leakage current mechanisms in high performance alumina-silicone nanolaminate dielectrics
SK Sahoo, RP Patel, CA Wolden - Applied Physics Letters, 2012 - pubs.aip.org
Alumina-silicone nanolaminates deposited by plasma-enhanced chemical vapor deposition
were explored as dielectrics in metal-insulator-metal capacitors. Temperature-dependent …
were explored as dielectrics in metal-insulator-metal capacitors. Temperature-dependent …
Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks
SK Sahoo, D Misra - Applied Physics Letters, 2012 - pubs.aip.org
The temperature and field dependent leakage current in HfO 2/SiO 2 gate stack for in situ
steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 …
steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 …
The effect of SiO2 barrier layer on the dielectric properties of CaCu3Ti4O12 films
L Fang, M Shen, J Yang, Z Li - Journal of Physics D: Applied …, 2005 - iopscience.iop.org
Abstract CaCu 3 Ti 4 O 12 (CCTO) film is attractive for microelectronic device applications
due to its high dielectric constant. However, its dielectric loss has to be lowered. In this study …
due to its high dielectric constant. However, its dielectric loss has to be lowered. In this study …