Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

We find that O-vacancy (VO) acts as a hole trap and plays a role in negative bias illumination
stress instability in amorphous In–Ga–Zn–O thin film transistors. Photoexcited holes drift …

The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

We perform first-principles density functional calculations to investigate the atomic and
electronic properties of various O-vacancy (VO) defects in amorphous indium gallium zinc …

We investigated the visible photon accelerated negative bias instability (NBI) in amorphous
In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). As reported in previous works, the rigid shift …

Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last
few years, especially for large area electronic applications, such as high resolution active …

Organic field‐effect transistors (OFETs) are considered in technological applications for
which low cost or mechanical flexibility are crucial factors. The environmental stability of the …

Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …

We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide
(GIZO) thin film transistors. The application of light on the negative bias temperature stress …