III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
GaAs nanowires (NWs) grown by molecular-beam epitaxy may contain segments of both the
zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that …
zincblende (ZB) and wurtzite (WZ) phases. Depending on the growth conditions, we find that …
A story told by a single nanowire: optical properties of wurtzite GaAs
The optical properties of the wurtzite (WZ) GaAs crystal phase found in nanowires (NWs) are
a highly controversial topic. Here, we study high-quality pure WZ GaAs/AlGaAs core–shell …
a highly controversial topic. Here, we study high-quality pure WZ GaAs/AlGaAs core–shell …
Enhanced and directional emission of semiconductor nanowires tailored through leaky/guided modes
Photoluminescence from finite semiconductor nanowires is theoretically investigated,
exploring and predicting their antenna-like properties for light emission in a variety of …
exploring and predicting their antenna-like properties for light emission in a variety of …
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic
devices with tunable bandgap. However, the lack of insight into the effects of the …
devices with tunable bandgap. However, the lack of insight into the effects of the …
Recent advances in nanowire quantum dot (NWQD) single-photon emitters
Future development of quantum technologies is dependent upon physical implementation of
quantum systems. Photonic platforms have gained significant attention owing to the …
quantum systems. Photonic platforms have gained significant attention owing to the …
Microheater controlled crystal phase engineering of nanowires using in situ transmission electron microscopy
Abstract Crystal Phase Quantum Dots (CPQDs) offer promising properties for quantum
communication. How CPQDs can be formed in Au‐catalyzed GaAs nanowires using …
communication. How CPQDs can be formed in Au‐catalyzed GaAs nanowires using …
Realistic multiband approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …
Photon cascade from a single crystal phase nanowire quantum dot
We report the first comprehensive experimental and theoretical study of the optical
properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum …
properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum …
Acoustically driven photon antibunching in nanowires
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport
photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based …
photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based …