Significant progress has been achieved with silicon carbide (SiC) high power electronics
and quantum technologies, both drawing upon the unique properties of this material. In this …

Silicon carbide (SiC) power devices are becoming central components in high voltage
electronics. However, defects at interfaces and in the bulk continue to severely impact their …

We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR)
spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of …

We report on a method by which we can systematically extract spectroscopic information
such as isotropic electron–nuclear hyperfine coupling constants from near-zero field …

This work explores the atomic-scale nature of defects within hafnium dioxide/silicon
dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are …

Gate-pulse-induced recombination, known as charge pum** (CP), is a fundamental
carrier recombination process, and has been utilized as a method for analyzing the electrical …

Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method
available to study electrically active point defects in semiconductor devices. Most EDMR …

We report an ultralow-field frequency-swept electrically detected magnetic resonance
(fsEDMR) measurement scheme sensitive to so-called ultrastrong coupling in paramagnetic …

We demonstrate the ability of a relatively new analytical technique, near-zero-field
magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field …

We report on the effects of barium interfacial layer (IL) deposition and nitric oxide (NO)
anneals on interface/near-interface defects in 4H-SiC metal-oxide-semiconductor field-effect …