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Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures
In this report, electrical characteristics of the Ni/GaN Schottky barrier diode grown on
sapphire have been investigated in the range of 20 K–300 K, using current–voltage …
sapphire have been investigated in the range of 20 K–300 K, using current–voltage …
Study on the density of trap states between CdZnTe and passivation layer based on MIS structure
X Song, X Liang, J Min, J Zhang, S Li, P Qiu… - Materials Science in …, 2022 - Elsevier
CdZnTe room temperature nuclear radiation detectors are widely used in the fields of
homeland security, medical imaging and astrophysics. In the Cd 1-x Zn x Te radiation …
homeland security, medical imaging and astrophysics. In the Cd 1-x Zn x Te radiation …
Determination of current transport and trap states density in AlInGaN/GaN heterostructures
The energy distribution and the relaxation time constant of the trap states with respect to
conduction bands in the (Ni/Au) Schottky contact on AlInGaN/GaN heterostructures were …
conduction bands in the (Ni/Au) Schottky contact on AlInGaN/GaN heterostructures were …
High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties
The DC sputtering power (DC SP) effect on the chemical composition, structural and
electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si …
electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si …
Study on improving the space charge behavior in insulating paper by depositing nanostructured alumina on its surface via magnetron sputtering
Y Mo, Y Yuan, R Liao - Thin Solid Films, 2020 - Elsevier
A nanostructured alumina (AlOx) layer was coated on an insulating paper surface to improve
space charge behavior by suppressing space charge injection from electrodes. Samples …
space charge behavior by suppressing space charge injection from electrodes. Samples …
Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode
The conductance measurements of the non-annealed (D1) and 400° C annealed (D2) Ni/n-
GaP/Al diodes were made over a wide frequency range of (10 kHz to 5 MHz) and …
GaP/Al diodes were made over a wide frequency range of (10 kHz to 5 MHz) and …
On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode
The energy density distribution profile of the interface states (N ss) and their relaxation time
(τ) of Al/pentacene/p-GaAs heterojunction diodes were obtained from the admittance …
(τ) of Al/pentacene/p-GaAs heterojunction diodes were obtained from the admittance …
[HTML][HTML] Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor …
JJ Freedsman, T Kubo, T Egawa - AIP advances, 2012 - pubs.aip.org
The trap** properties of in-situ metal-organic chemical vapor deposition (MOCVD) grown
AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS …
AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS …
Preparation and electrical characterization of Au/n-Si (1 1 0) structure with PVA–nickel acetate composite film interfacial layer
Two types of Schottky diodes, with and without PVA (Ni-doped) layer, were fabricated to
investigate whether or not the PVA (Ni-doped) layer is effective on some electrical …
investigate whether or not the PVA (Ni-doped) layer is effective on some electrical …
Current transport and formation of energy structures in narrow Au/n-GaAs Schottky diodes
RK Mamedov, MA Yeganeh - Microelectronics Reliability, 2012 - Elsevier
The current transport and formations of potential barrier height in narrow Au/n-GaAs
Schottky diodes (SD) with a contact surface in length of 200μm, width of 1 and 4μm have …
Schottky diodes (SD) with a contact surface in length of 200μm, width of 1 and 4μm have …