An overview of nonvolatile emerging memories—Spintronics for working memories
T Endoh, H Koike, S Ikeda, T Hanyu… - IEEE journal on …, 2016 - ieeexplore.ieee.org
This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It
first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM …
first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM …
Low store energy, low VDDmin, 8T2R nonvolatile latch and SRAM with vertical-stacked resistive memory (memristor) devices for low power mobile applications
PF Chiu, MF Chang, CW Wu… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
Many mobile SoC chips employ a “two-macro” approach including volatile and nonvolatile
memory macros (ie SRAM and Flash), to achieve high-performance or low-voltage power-on …
memory macros (ie SRAM and Flash), to achieve high-performance or low-voltage power-on …
Design and optimization of nonvolatile multibit 1T1R resistive RAM
Memristor-based random access memory (RAM) is being explored as a potential
replacement for flash memory to sustain the historic trends in the improvement of density …
replacement for flash memory to sustain the historic trends in the improvement of density …
A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier
The growing demand for data and code storage has driven the development of emerging
embedded nonvolatile memory (eNVM) technologies 1–6. HZO-based (Hf_0.5Zr_0.50_2) …
embedded nonvolatile memory (eNVM) technologies 1–6. HZO-based (Hf_0.5Zr_0.50_2) …
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier
Hf0. 5Zr0. 5O2 (HZO)-based ferroelectric random access memory (FeRAM) is a good
candidate for the embedded nonvolatile memory (eNVM) applications because of its high …
candidate for the embedded nonvolatile memory (eNVM) applications because of its high …
A weighted sensing scheme for ReRAM-based cross-point memory array
In recent years, the design of cross-point array based on resistive random access memory
(ReRAM) has been widely investigated because it offers extremely high storage density and …
(ReRAM) has been widely investigated because it offers extremely high storage density and …
A new read circuit for multi-bit memristor-based memories based on time to digital sensing circuit
H Hossam, G Mamdouh, HH Hussein… - 2018 IEEE 61st …, 2018 - ieeexplore.ieee.org
Memristors have gained significant attention in various applications because of their unique
properties especially in memory technologies. Owing to their analog nature, memristors …
properties especially in memory technologies. Owing to their analog nature, memristors …
A 1Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation
Resistive RAM (RRAM) has emerged as a promising candidate for the next generation of
non-volatile memories (NVMs) due to its low write voltage and compact area that is …
non-volatile memories (NVMs) due to its low write voltage and compact area that is …
Enabling pro-active user-centered recommender systems: An initial evaluation
Traditionally, an end-user has played only a pas-sive role when viewing commercial media:
he/she is ex-pected to consume content, not interact with it. In this paper we explore …
he/she is ex-pected to consume content, not interact with it. In this paper we explore …
[PDF][PDF] Flexible Ferroelectric-Capacitor Element for Low Power and Compact Logic-in-Memory Architectures.
S Ishihara, N Idobata, M Hariyama… - Journal of Multiple …, 2013 - ecei.tohoku.ac.jp
The “Von Neumann bottleneck” and large standby power become serious problems in
recent deep-sub-micron technology. To solve these problems, this paper presents …
recent deep-sub-micron technology. To solve these problems, this paper presents …