Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …

Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent do** routes have grown …

Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …