By combining electrical, physical, and transport/atomistic modeling results, this study
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …

In situ pair distribution function (PDF) analyses and density functional theory (DFT)
computations are used to probe local structural transitions of M6O8 nodes found in two …

Overcoming challenges associated with implementation of resistive random access memory
technology for non-volatile information storage requires identifying the material …

We use a combination of density functional theory and calorimetric measurements to
investigate the monoclinic to tetragonal transition in hafnia and zirconia. We measure the …

The evolution over time of the leakage current in HfO2-based MIM capacitors under
continuous or periodic constant voltage stress (CVS) was studied for a range of stress …

The gate leakage current density (J g) of ultrathin (∼ 3 nm) Al-doped HfO2 (Al: HfO2) films
with an Al concentration of∼ 11% was lower than that of the control HfO2 film by 2 orders of …

We report detailed investigations on the local electronic/atomic structure and
photoluminescence properties of chemically synthesized Eu: HfO 2 powders. X-ray …

Single phase nanoparticles (NPs) of CeO2, Ce0. 5Zr0. 5O2, Ce0. 5Hf0. 5O2 and Ce0. 5Hf0.
25Zr0. 25O2 were successfully synthesized by co-precipitation method at constant pH and …

Electron barrier height measurements at TiN x/HfO 2 interfaces in metal-insulator-metal
structures using internal photoemission of electrons reveal a significant (≈ 1 eV, ie, about …

Thin hafnium oxide films were prepared by atomic layer deposition using a carbon-free
precursor, tetrakis (tetrahydroborato) hafnium [Hf (BH 4) 4], and H 2 O. Film growth was …