Logarithmic trap** and detrap** in β-Ga2O3 MOSFETs: Experimental analysis and modeling

Special topic on Wide-and ultrawide-bandgap electronic semiconductor devices

J Würfl, T Palacios, HG ** in MOScaps investigated by fast capacitive techniques
M Fregolent, A Marcuzzi, C De Santi… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
We present a detailed investigation of charge trap** processes in Al_2O_3/GaN vertical
MOS capacitors, detected by means of advanced capacitance measurements. The devices …
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[HTML][HTML] Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent …

A Marcuzzi, M Avramenko, C De Santi… - Materials Science in …, 2024 - Elsevier
SiC power MOSFETs are reported to suffer from both positive and negative threshold
voltage shifts. Positive shift is well understood in the literature and attributed to electron …
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