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Large atomic displacements associated with the nitrogen antisite in GaN
We present results of an extensive theoretical study of the nitrogen antisite in GaN. The
neutral antisite in c-GaN is reported to exhibit metastable behavior similar to the arsenic …
neutral antisite in c-GaN is reported to exhibit metastable behavior similar to the arsenic …
Density-functional theory of sp-bonded defects in III/V semiconductors
Publisher Summary This chapter discusses the density-functional theory of sp-bonded
defects in III/V semiconductors. The requirements of semiconductor technology for accurate …
defects in III/V semiconductors. The requirements of semiconductor technology for accurate …
Metastable vacancy in the EL2 defect in GaAs studied by positron-annihilation spectroscopies
K Saarinen, S Kuisma, P Hautojärvi, C Corbel… - Physical Review B, 1994 - APS
We have performed positron-lifetime and Doppler-broadening experiments before and after
illumination of undoped semi-insulating GaAs with 0.7–1.5-eV photons. When the EL2 …
illumination of undoped semi-insulating GaAs with 0.7–1.5-eV photons. When the EL2 …
Low temperature GaAs: Electrical and optical properties
This paper presents results of a wide range of studies related to compositional, structural,
optical and electrical properties of GaAs grown by molecular beam epitaxy (MBE) at low …
optical and electrical properties of GaAs grown by molecular beam epitaxy (MBE) at low …
[PDF][PDF] Energy levels and electrical activity of dislocation electron states in GaAs
Experimental results are presented confirming that the two energy levels in GaAs: E _c-0.68
eV and E _v+ 0.37 eV, discovered in plastically deformed crystals, belong actually to …
eV and E _v+ 0.37 eV, discovered in plastically deformed crystals, belong actually to …
Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots
Electron emission from charged self-assembled InAs quantum dots is studied by means of
deep level transient spectroscopy in strong magnetic fields applied parallel to the quantum …
deep level transient spectroscopy in strong magnetic fields applied parallel to the quantum …
Evidence for trigonal symmetry of the metastable state of the EL2 defect in GaAs
P Trautman, JM Baranowski - Physical review letters, 1992 - APS
We have measured recovery of the optical absorption of the EL2 defect under [100] and
[111] uniaxial stress during heating of the crystal. The recovery step, occurring at 45 K in n …
[111] uniaxial stress during heating of the crystal. The recovery step, occurring at 45 K in n …
Electrical spectroscopy of GaAs with intrinsic illumination: The optical recovery of EL2
We extend the technique of photoconductance and photocapacitance characterization of
semiconductors to excitation energies above the band gap. Intrinsic illumination was found …
semiconductors to excitation energies above the band gap. Intrinsic illumination was found …
Electron irradiation of GaAs: Improvement of transport properties and observation of DX‐like centers at ambient pressure
H Ghamlouch, M Aubin, C Carlone… - Journal of applied …, 1993 - pubs.aip.org
Epitaxial n‐type GaAs samples were studied before and after irradiation with 7 MeV
electrons at fluences varying from 1× 1013 to 5× 1015/cm2. The measurements involved the …
electrons at fluences varying from 1× 1013 to 5× 1015/cm2. The measurements involved the …
Observation of luminescence from the EL2 metastable state in liquid-encapsulated Czochralski-grown GaAs under hydrostatic pressure
TW Steiner, MK Nissen, SM Wilson, Y Lacroix… - Physical Review B, 1993 - APS
We have observed luminescence due to excitons bound to EL2 in its metastable state in
both semi-insulating and n-type liquid-encapsulated Czochralski-grown GaAs. This …
both semi-insulating and n-type liquid-encapsulated Czochralski-grown GaAs. This …