Provided herein are methods and apparatuses for reducing line bending when depositing a
metal such as tungsten, molybdenum, ruthenium, or cobalt into features on sub strates by …

Methods and apparatuses for filling features with metal materials such as tungsten-
containing materials in a substantially void-free manner are provided. In certain …

Described herein are methods of filling features with tung sten, and related systems and
apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods …

Sten and related systems and apparatus. The methods include inside-out fill techniques as
well as conformal deposition in features. Inside-out fill techniques can include selective …

US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill - Google
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …

BACKGROUND The background description provided herein is for the pur pose of generally
presenting the context of the disclosure. Work of the presently named inventors, to the extent …

Provided herein are methods and apparatuses for filling features metal-containing materials.
One aspect of the dis closure relates to a method for filling structures with a metal-containing …

Methods of depositing tungsten in different sized features on a substrate are provided
herein. The methods involve depositing a first bulk layer of tungsten in the features, etching …

Methods of producing low resistivity tungsten bulk layers having lower roughness and
higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier …

In the following description, numerous specific details are set forth in order to provide a
thorough understanding of the present invention, which pertains to forming thin tungsten …