[KNIHA][B] Silicon-based material and devices, two-volume set: materials and processing, Properties and Devices

HS Nalwa - 2001 - books.google.com
This book covers a broad spectrum of the silicon-based materials and their device
applications. This book provides a broad coverage of the silicon-based materials including …

Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film

CJ Lin, GR Lin - IEEE Journal of Quantum Electronics, 2005 - ieeexplore.ieee.org
White-light and blue-green electroluminescence (EL) of a multirecipe Si-ion-implanted
SiO/sub 2/(SiO/sub 2/: Si/sup+/) film on Si substrate are demonstrated. The blue-green …

Effect of surface modification by thermally oxidization and HF etching on UV photoluminescence emission of porous silicon

H Song, Z Li, H Chen, Z Jiao, Z Yu, Y **, Z Yang… - Applied surface …, 2008 - Elsevier
Photoluminescence of porous silicon (PS) is instable due perhaps to the nanostructure
modification in air. The controllable structure modification processes on the as-prepared PS …

Native and radiation-induced photoluminescent defects in  Role of impurities

F Meinardi, A Paleari - Physical Review B, 1998 - APS
We report photoluminescence (PL) data on amorphous SiO 2 in the spectral range of the α
(4.3 eV), β (3.1 eV), and γ (2.7 eV) emissions excited with synchrotron radiation. Differently …

Conformational disorder in vitreous systems probed by photoluminescence activity in

M Leone, S Agnello, R Boscaino, M Cannas… - Physical Review B, 1999 - APS
The emission bands α E (4.2 eV) and β (3.1 eV) have been investigated in a variety of as-
grown natural silica types. We report experimental results on the stationary …

Multi-peak behavior of photoluminescence of silica particles heat-treated in hydrogen at elevated temperature

GQ Xu, ZX Zheng, WM Tang, YC Wu - Journal of luminescence, 2007 - Elsevier
Pure nano-partical silica was prepared by sol–gel method, and then was treated in a H2
ambient at different temperatures. The surface structure and valence bonding of samples …

Revisited thermal approach to model laser-induced damage and conditioning process in KH2PO4 and D2xKH2 (1− x) PO4 crystals

A Dyan, M Pommies, G Duchateau… - … Induced Damage in …, 2007 - spiedigitallibrary.org
A thermal model is considered to better understand Laser-Induced Damage and
conditioning mechanism in KH 2 PO 4 (KDP) and D 2x KH 2 (1-x) PO 4 (DKDP) crystals. We …

[PDF][PDF] Gamma ray induced processes of point defect conversion in silica

S Agnello - University of Palermo, Palermo, 2000 - Citeseer
Increasing attention has been paid through the last decades to the subject of point defects in
amorphous materials [1]. This is due to the wide technological relevance of such materials …

Vacuum ultraviolet absorption of silica samples

A Anedda, CM Carbonaro, R Corpino… - Journal of non-crystalline …, 1999 - Elsevier
Optical absorption analysis in the ultraviolet and vacuum ultraviolet region from 4.0 to 9.0 eV
has been performed on different silica materials. We analysed natural and synthetic silica …

Time-resolved photoluminescence analysis of multidose Si-ion-implanted SiO2

CJ Lin, CK Lee, EWG Diau, GR Lin - Journal of the …, 2005 - iopscience.iop.org
The continuous-wave/time-resolved photoluminescence (CWPL/TRPL) and capacitance–
voltage (CV) analysis of multirecipe silicon-ion-implanted are demonstrated to study the …