A review of selected topics in physics based modeling for tunnel field-effect transistors
The research field on tunnel-FETs (TFETs) has been rapidly develo** in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
Temperature dependence of analog performance, linearity, and harmonic distortion for a ge-source tunnel FET
In this article, we report an investigation of the effects of variation in temperature in the range
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
In this article, a Ge‐source is employed in split drain Z‐shaped line TFET structure (SD‐ZHP‐
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …
Horizontal heterojunction integration via template-Assisted selective epitaxy
We report on the successful integration of multiple atomically thin horizontal heterojunctions
(HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined …
(HJs) epitaxially grown via metal organic chemical vapor deposition inside a confined …
Si1-xGex Positive Feedback Field-effect Transistor with Steep Subthreshold Swing for Low-voltage Operation
The most prominent challenge for MOSFET scaling is to reduce power consumption;
however, the supply voltage ($ V_ {DD} $) cannot be scaled down because of the carrier …
however, the supply voltage ($ V_ {DD} $) cannot be scaled down because of the carrier …
Effect of drain engineering on DC and RF characteristics in Ge-source SD-ZHP-TFET
In this paper, a Ge-source is employed in split drain Z-shaped line TFET structure (SD-ZHP-
TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the …
TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the …
P-type tunnel FETs with triple heterojunctions
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb
heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the …
heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the …
[HTML][HTML] Selective and confined epitaxial growth development for novel nano-scale electronic and photonic device structures
Selectively growing epitaxial material in confined dielectric structures has been explored
recently as a pathway to integrate highly mismatched materials on silicon substrates. This …
recently as a pathway to integrate highly mismatched materials on silicon substrates. This …
A fully analytical current model for tunnel field-effect transistors considering the effects of source depletion and channel charges
Z Lyu, H Lu, Y Zhang, Y Zhang, B Lu… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, a universal analytical current model for a double-gate Si-based tunnel field-
effect transistor (TFET) is presented considering the effects of charges in source depletion …
effect transistor (TFET) is presented considering the effects of charges in source depletion …
Scalable GaSb/InAs tunnel FETs with nonuniform body thickness
GaSb/InAs heterojunction tunnel FETs are strong candidates in building future low-power
ICs, as they could provide both steep subthreshold swing and large on-state current (I ON) …
ICs, as they could provide both steep subthreshold swing and large on-state current (I ON) …