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HfO2-based resistive switching memory devices for neuromorphic computing
HfO 2-based resistive switching memory (RRAM) combines several outstanding properties,
such as high scalability, fast switching speed, low power, compatibility with complementary …
such as high scalability, fast switching speed, low power, compatibility with complementary …
Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices
Designing next‐generation molecular devices typically necessitates plentiful oxygen‐
bearing sites to facilitate multiple‐electron transfers. However, the theoretical limits of …
bearing sites to facilitate multiple‐electron transfers. However, the theoretical limits of …
[HTML][HTML] Multilevel HfO2-based RRAM devices for low-power neuromorphic networks
Training and recognition with neural networks generally require high throughput, high
energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at …
energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at …
Accurate program/verify schemes of resistive switching memory (RRAM) for in-memory neural network circuits
Resistive switching memory (RRAM) is a promising technology for embedded memory and
its application in computing. In particular, RRAM arrays can provide a convenient primitive …
its application in computing. In particular, RRAM arrays can provide a convenient primitive …
Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications
The demand of flexible neuromorphic computing electronics is increasing with the rapid
development of wearable artificial intelligent devices. The flexible resistive random‐access …
development of wearable artificial intelligent devices. The flexible resistive random‐access …
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
In order to study the device-to-device and cycle-to-cycle variability of switching voltages in 4-
kbit RRAM arrays, an alternative statistical approach has been adopted by using …
kbit RRAM arrays, an alternative statistical approach has been adopted by using …
Toward reliable multi-level operation in RRAM arrays: Improving post-algorithm stability and assessing endurance/data retention
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays
is currently a challenging task due to several threats like the post-algorithm instability …
is currently a challenging task due to several threats like the post-algorithm instability …
HRS instability in oxide-based bipolar resistive switching cells
One of the key challenges in the reliability of valence change [valence change-based
memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term …
memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term …
A modeling methodology for resistive ram based on stanford-pku model with extended multilevel capability
Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the
exigent need for a model has motivated research groups to formulate realistic models, the …
exigent need for a model has motivated research groups to formulate realistic models, the …
A consistent model for short-term instability and long-term retention in filamentary oxide-based memristive devices
Major challenges concerning the reliability of resistive switching random access memories
based on the valence change mechanism (VCM) are short-term instability and long-term …
based on the valence change mechanism (VCM) are short-term instability and long-term …