Semiconducting double-layer lead monoxide tin oxide nanostructures for photodetectors
This study examines the high-frequency-dependent characteristics of the PbO/SnO2 double-
layer semiconductor (DLS) structures. Recently, researchers have been particularly …
layer semiconductor (DLS) structures. Recently, researchers have been particularly …
Frequency dependent dielectric spectroscopy of Au/n-Si structure with stannic oxide (SnO2) interfacial layer
S Karadeniz, DE Yıldız - Journal of Materials Science: Materials in …, 2023 - Springer
This study investigated the frequency dependent dielectric spectrum of Au/Si structures in
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 …
In this study, the frequency/voltage dependent profiles of the real/imaginary parts of the
complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent …
complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent …
Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering
N Borwornpornmetee, P Sittimart, T Traiprom… - Materials Science in …, 2024 - Elsevier
To connect thermal dependency with Si-p/beta-FeSi 2-n heterostructure efficiency, this work
explored the impedance characteristics accompanied by dielectric and conductivity …
explored the impedance characteristics accompanied by dielectric and conductivity …
Impedance characteristics under different voltages of n-β-FeSi2/p-Si heterojunctions constructed via facing target sputtering
N Borwornpornmetee, R Chaleawpong… - Materials Science in …, 2023 - Elsevier
Utilizing a substrate temperature of 600° C, n-semiconducting iron disilicide (β-FeSi 2)/p-
silicon heterojunctions have been constructed with direct-current sputtering and a couple of …
silicon heterojunctions have been constructed with direct-current sputtering and a couple of …
Study of molecular interactions in aqueous polymer in presence of NSAID using spectroscopic technique
RR Karale, KB Kabara, S Alwaleedy… - Journal of Molecular …, 2024 - Elsevier
The dielectric study of aqueous Polyvinylpyrrolidone (PVP)(K-30) has been carried out in the
presence of Ibuprofen (IBP) in the frequency range of 0.01 GHz–30 GHz at the temperature …
presence of Ibuprofen (IBP) in the frequency range of 0.01 GHz–30 GHz at the temperature …
Investigation into the impedance, dielectric behavior, and conductivity within p-silicon/n-nanocrystalline iron disilicide heterojunctions and equivalent circuit model in …
N Borwornpornmetee, P Sittimart, T Traiprom… - Materials Science in …, 2025 - Elsevier
The p-Si/n-nanocrystalline FeSi 2 heterojunctions constructed through facing-targets
sputtering were characterized for impedance under various frequencies and temperatures of …
sputtering were characterized for impedance under various frequencies and temperatures of …
A study on the complex dielectric (ε*)/electric-modulus (M*)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S: DLC)/p-Si/Au (MIS)-type …
In this work, the Al/(S: DLC)/p-Si/Au Schottky structures were fabricated, and the real and
imaginary parts of complex-permittivity (ε*), complex electric-modulus (M*), complex …
imaginary parts of complex-permittivity (ε*), complex electric-modulus (M*), complex …
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S: DLC)/p-Si (MIS) structures
Abstract Complex dielectric (ε*= ε′− jε ″)/electric modulus (M*= M′+ jM ″), loss tangent
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …
(tan δ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated …
Effect of TiO2-Surfactant Interface on the Electrical and Dielectric Properties of a Metal–Insulator–Semiconductor (MIS) Structure
Y Azizian-Kalandaragh, HI Efkere… - Journal of Electronic …, 2025 - Springer
To explore the effect of a TiO2-surfactant (Brij 58) insulator as an interfacial layer on the
electrical properties of a metal–semiconductor (MS) structure, a Au/TiO2-surfactant/n-Si …
electrical properties of a metal–semiconductor (MS) structure, a Au/TiO2-surfactant/n-Si …