InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
This article reviews the fundamental properties of InGaN materials. The growth kinetics
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting
Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …
Report from the third workshop on future directions of solid-state chemistry: The status of solid-state chemistry and its impact in the physical sciences
FOREWORD: Public awareness of solid-state chemistry, or more broadly solid-state science
and technology rapidly grew along with the transistor revolution and the development of the …
and technology rapidly grew along with the transistor revolution and the development of the …
Composition map** in InGaN by scanning transmission electron microscopy
We suggest a method for chemical map** that is based on scanning transmission electron
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …
Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs)
grown on sapphire and GaN substrates were investigated. Temperature-dependent …
grown on sapphire and GaN substrates were investigated. Temperature-dependent …
Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure
N Yamada, M Mizutani, K Matsuura… - ACS Applied …, 2021 - ACS Publications
Herein, wurtzite-type MgSnN2–ZnSnN2 alloys (Mg x Zn1–x SnN2) are proposed as earth-
abundant and band gap-tunable semiconductors with fundamental band gaps in the range …
abundant and band gap-tunable semiconductors with fundamental band gaps in the range …
Does In form In-rich clusters in InGaN quantum wells?
CJ Humphreys - Philosophical Magazine, 2007 - Taylor & Francis
The reason the InGaN/GaN quantum well system emits intense light even though the
dislocation density is high is assessed. First, the evidence from electron microscopy for …
dislocation density is high is assessed. First, the evidence from electron microscopy for …
The impact of surface and retardation losses on valence electron energy-loss spectroscopy
The inelastic scattering of fast electrons transmitting thin foils of silicon (Si), silicon nitride
(Si3N4), gallium arsenide (GaAs), gallium nitride (GaN) and cadmium selenide (CdSe) was …
(Si3N4), gallium arsenide (GaAs), gallium nitride (GaN) and cadmium selenide (CdSe) was …
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting
diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) …
diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) …
Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
The high intensity of light emitted in In x Ga 1− x N/GaN heterostructures has been generally
attributed to the formation of indium-rich clusters in In x Ga 1− x N quantum wells (QWs) …
attributed to the formation of indium-rich clusters in In x Ga 1− x N quantum wells (QWs) …