High Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review
This article reviews the performance of vertical metal-oxide-semiconductor (MOS) radiation
detectors on n-type 4H-silicon carbide (SiC) epitaxial layers, comparing SiO2, Y2O3, and …
detectors on n-type 4H-silicon carbide (SiC) epitaxial layers, comparing SiO2, Y2O3, and …
A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes
Abstract 4H-SiC Schottky barrier diodes (SBDs) were exposed to 5.4 MeV alpha particles
with fluences of 2.55× 1011 cm− 2, 5.11× 1011 cm− 2 and 7.67× 1011 cm− 2, respectively …
with fluences of 2.55× 1011 cm− 2, 5.11× 1011 cm− 2 and 7.67× 1011 cm− 2, respectively …
High Resolution Cr/4H-SiC Radiation Detector for Harsh Environment Applications
We report radiation detection using 4H-SiC Schottky barrier diodes (SBDs) with chromium
(Cr) serving as the Schottky barrier contact. These SBDs are particularly suited for …
(Cr) serving as the Schottky barrier contact. These SBDs are particularly suited for …
Design And Fabrication Of High-resolution Epitaxial 4h-sic Metal Insulator Semiconductor Detectors
O Karadavut - 2023 - scholarcommons.sc.edu
In the last two decades, significant strides have been made in the epitaxial film growth of 4H-
silicon carbide (4H-SiC), establishing it as a premier wide bandgap material for radiation …
silicon carbide (4H-SiC), establishing it as a premier wide bandgap material for radiation …