Interdiffusion along grain boundaries can lead to shift of grain boundaries in form of Grain
Boundary Diffusion Induced Grain Boundary Migration, DIGM, in systems forming wide …

To fully exploit the potential of semiconducting nanowires for devices, high quality electrical
contacts are of paramount importance. This work presents a detailed in situ transmission …

Diffusion on the nano/atomic scales in multilayers, thin films has many challenging features
even if the role of structural defects (grain-boundaries, dislocations, etc.) can be neglected …

The Kolmogorov–Johnson–Mehl–Avrami model for isothermal transformation kinetics is
universal under specific assumptions. However, the experimental Avrami exponent deviates …

Abstract Polycrystalline Mg2Si thin films of varying thickness were grown on (100) Si
substrate by employing extensive surface diffusion of elemental atoms. At first, magnesium …

Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications
covers the basic fundamentals, techniques, applications, and latest developments in the …

Nickel silicides and nickel germanides are under interest for their microelectronic
applications. They are often declared to have the same behavior that is usually observed in …

The Ni monosilicide alloyed with Pt is widely used as contact material in advanced
microelectronics devices and a good knowledge of silicide formation kinetics is required for …

In situ measurements of the kinetics of the transient θ-Ni 2 Si phase formation have been
obtained by x-ray diffraction and differential scanning calorimetry. A possible mechanism for …

Metallic silicides have been used as contact materials on source/drain and gate in metal‐
oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is …