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Charging stand for percussive massage device
JS Solana, B Nazarian, T Ho - US Patent 10,714,953, 2020 - Google Patents
A charging stand for use with a percussive massage device that includes a rechargeable
battery. The charging stand includes a main body portion that defines a charging channel …
battery. The charging stand includes a main body portion that defines a charging channel …
Memory cell and an array of memory cells
DVN Ramaswamy, W Kinney, MD Tiburzi - US Patent 9,472,560, 2016 - Google Patents
A memory cell includes a first electrode and a second electrode. A select device and a
programmable device are in series with each other between the first and second electrodes …
programmable device are in series with each other between the first and second electrodes …
Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
Y Fukumoto, KI Shimura, A Kamijo - US Patent 7,394,626, 2008 - Google Patents
(57) ABSTRACT A magnetoresistance device is provided for improving ther mal stability of a
magnetoresistance element by preventing inter-diffusion between a conductor (such as a via …
magnetoresistance element by preventing inter-diffusion between a conductor (such as a via …
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field …
KM Karda, C Mouli, GS Sandhu - US Patent 9,559,118, 2017 - Google Patents
HOIL 2L/28(2006.01) TW 483170 4/2002 HOIL 29/5(2006.01) WO WO 2008-073.529 6,
2008 HOIL 29/66(2006.01) WO PCT/US2014/047570 11/2014 HOIL 29/06(2006.01) WO …
2008 HOIL 29/66(2006.01) WO PCT/US2014/047570 11/2014 HOIL 29/06(2006.01) WO …
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field …
KM Karda, C Mouli, GS Sandhu - US Patent 9,337,210, 2016 - Google Patents
(57) ABSTRACT A vertical ferroelectric field effect transistor construction comprises an
isolating core. A transition metal dichalco genide material encircles the isolating core and …
isolating core. A transition metal dichalco genide material encircles the isolating core and …
Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric …
AA Chavan, DVN Ramaswamy, M Nahar - US Patent 9,876,018, 2018 - Google Patents
(57) ABSTRACT A method used in forming an electronic component com prising conductive
material and ferroelectric material com prises forming a non-ferroelectric metal oxide …
material and ferroelectric material com prises forming a non-ferroelectric metal oxide …
Charging stand for a percussive massage device
JS Solana, B Nazarian, T Ho - US Patent 10,847,984, 2020 - Google Patents
A charging stand for use with a percussive massage device that includes a rechargeable
battery. The charging stand includes a main body portion that defines a charging channel …
battery. The charging stand includes a main body portion that defines a charging channel …
Memory cells
KM Karda, Q Tao, DVN Ramaswamy, H Liu… - US Patent …, 2016 - Google Patents
7,902,594 B2 3/2011 Ono current leakage path from one of the capacitor electrodes to the
other through the ferroelectric material. There is a parallel current leakage path from the one …
other through the ferroelectric material. There is a parallel current leakage path from the one …
Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
Y Fukumoto, KI Shimura, A Kamijo - US Patent 7,742,263, 2010 - Google Patents
(57) ABSTRACT A magnetoresistance device is provided for improving ther mal stability of a
magnetoresistance element by preventing inter-diffusion between a conductor (such as a via …
magnetoresistance element by preventing inter-diffusion between a conductor (such as a via …
Non-volatile memory resistor cell with nanotip electrode
ST Hsu, F Zhang, GM Stecker, RA Barrowcliff - US Patent 7,208,372, 2007 - Google Patents
The present application describes a memory resistor cell where one of the electrodes is
formed with nanotips extend ing into the memory resistor material. The conductive nan otips …
formed with nanotips extend ing into the memory resistor material. The conductive nan otips …