Do** mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the
enabling step in the electronic and optoelectronic revolutions. The recent emergence of a …

Abstract d 0 ferromagnetic oxide semiconductors have recently been proposed as a
potential and alternative material with high Curie temperature ferromagnetism, which is …

The magnetic properties of disordered graphene and irradiated graphite are systematically
studied using a combination of mean-field Hubbard model and first-principles calculations …

The structural, optical, and dielectric properties of pure NiO and yttrium (Y) doped NiO (Y:
NiO) were studied in the present article for optoelectronic application. The pristine and …

This review presents the recent progress in computational materials design, experimental
realization, and control methods of spinodal nanodecomposition under three-and two …

In recent years, non-magnetic elements-doped oxide materials have been projected as one
of the promising materials for application in optoelectronics and spintronics. The primary …

We have studied structural, electronic, and magnetic properties of the graphene-like ZnO
monolayer doped with nonmetal species using the first-principles calculations. Particular …

The key scientific issues in the application and development of semiconductor
micro/nanodevices and optoelectronics components have driven scientists to investigate in …

Researchers have been making persistent efforts in recent years to find novel and suitable
oxide materials with room temperature d 0 ferromagnetic characteristics to be utilized in …

To shed light on the mechanism responsible for the weak ferromagnetism in undoped wide
band gap oxides, we carry out a comparative study on ZnO thin films prepared using both …