Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

In recent years, new types of semiconductor heterostructures consisting of only one material
in different crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic …

Using a structural search method in combination with first-principles calculations, we found
lots of low energy 2D carbon allotropes and examined all possible Dirac points around their …

In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to
30 keV He ion irradiation across various doses while maintaining a temperature of 800° C …

The extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the
recombination-enhanced motion of leading partial dislocations has been investigated by the …

Recent attempts to make SiC diodes have revealed a problem with stacking fault expansion
in the material, leading to unstable devices. In this paper, we present detailed results from a …

4H–SiC samples doped with nitrogen at∼ 3× 10 19 cm− 3 were annealed in Ar for 90 min at
1150° C. Transmission electron microscopy revealed stacking faults at a density of …

Spontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon
carbide crystals have been observed by transmission electron microscopy (TEM). Faults …

We report on optically induced nucleation and expansion of stacking faults in hexagonal SiC
structures. The activation energy for partial dislocation glide under optical excitation is found …

The formation and expansion of recombination-induced stacking faults (SFs) within 4H–SiC
bipolar and unipolar devices is known to induce a drift in the forward voltage during forward …