Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Results presented in this letter demonstrate that the effective channel mobility of lateral,
inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub …

SiC electronic device technology has made rapid progress during the past decade. In this
paper, we review the evolution of SiC power MOSFETs between 1992 and the present …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation
of SiC may inevitably lead to defect creation, the idea is to form the interface without …

From the viewpoint of application in power electronics, SiC possesses the greatest
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …

We report first-principles calculations that clarify the formation energies and charge
transition levels of native point defects and carbon clusters in the 4H polytype of silicon …

Using classical and ab initio calculations we demonstrate that extra electrons can be
trapped in pure crystalline and amorphous SiO 2 (a-SiO 2) in deep band gap states. The …

The electron mobility and free electron density have been measured in 4H–and 6H–SiC
metal-oxide-semiconductor inversion layers using the Hall effect. The 4H–SiC inversion …