Design of nitride semiconductors for solar energy conversion

A Zakutayev - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Nitride semiconductors are a promising class of materials for solar energy conversion
applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better …

Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials

AD Martinez, AN Fioretti, ES Toberer… - Journal of Materials …, 2017 - pubs.rsc.org
II–IV–V2 materials offer the promise of enhanced functionality in optoelectronic devices due
to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic …

Can Pb-free halide double perovskites support high-efficiency solar cells?

CN Savory, A Walsh, DO Scanlon - ACS energy letters, 2016 - ACS Publications
The methylammonium lead halides have become champion photoactive semiconductors for
solar cell applications; however, issues still remain with respect to chemical instability and …

Band gap and work function tailoring of SnO 2 for improved transparent conducting ability in photovoltaics

AM Ganose, DO Scanlon - Journal of Materials Chemistry C, 2016 - pubs.rsc.org
Transparent conducting oxides (TCOs) are an essential component in modern
optoelectronic devices, such as solar panels and touch screens. Their ability to combine …

Ternary nitride materials: fundamentals and emerging device applications

AL Greenaway, CL Melamed… - Annual Review of …, 2021 - annualreviews.org
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades,
as their diverse chemistries and structures make them appealing for a variety of applications …

Combinatorial insights into do** control and transport properties of zinc tin nitride

AN Fioretti, A Zakutayev, H Moutinho… - Journal of Materials …, 2015 - pubs.rsc.org
ZnSnN2 is an Earth-abundant semiconductor analogous to the III–nitrides with potential as a
solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven …

Monte Carlo simulations of disorder in and the effects on the electronic structure

S Lany, AN Fioretti, PP Zawadzki, LT Schelhas… - Physical Review …, 2017 - APS
In multinary compound semiconductors, cation disorder can decisively alter the electronic
properties and impact potential applications. ZnSn N 2 is a ternary nitride of interest for …

Utilizing site disorder in the development of new energy-relevant semiconductors

RR Schnepf, JJ Cordell, MB Tellekamp… - ACS Energy …, 2020 - ACS Publications
Controlling site disorder in ternary and multinary compounds enables tuning optical and
electronic properties at fixed lattice constants and stoichiometries, moving beyond many of …

Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber

T Veal, N Feldberg… - Advanced Energy …, 2015 - livrepository.liverpool.ac.uk
The band gap of earth-abundant ZnSnN2 can be tuned between 1 and 2 eV by varying the
growth conditions and resulting cation disorder. The optical absorption edges and carrier …

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

PC Quayle, EW Blanton, A Punya, GT Junno, K He… - physical review B, 2015 - APS
We investigate lattice ordering phenomena for the heterovalent ternaries that are based on
the wurtzite lattice, under the constraint that the octet rule be preserved. We show that, with …