Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for
the production of compound semiconductor materials. It describes how the technique works …

In this study we investigated the incorporation of the dopants Si, Mg, and Fe and the
unintentional impurities O and C in GaN films grown on m-plane (101¯ 0), a-plane (112¯ 0) …

The effects of background do**, surface encapsulation, and As4 overpressure on carbon
diffusion have been studied by annealing samples with 1000 Å p‐type carbon do** spikes …

This article presents a comprehensive study of the dependence of impurity incorporation on
the crystallographic orientation during metalorganic vapor phase epitaxy of III‐V compound …

Smooth N-polar InGaN/GaN and AlGaN/GaN multiquantum wells (MQWs) and
heterostructures were grown by metal organic chemical vapor deposition on (0001) …

Metal-organic chemical vapor deposition (MOCVD) can now be used routinely for the
preparation of a wide variety of groups III-V semiconductor materials. Ga-and In-based …

The influence of substrate misorientation angle on carbon impurity incorporation and
electrical properties of p-GaN grown at a low temperature of 900 C has been explored …

The ultra-high vacuum environment used for chemical beam epitaxy (CBE) and
metalorganic molecular beam epitaxy (MOMBE) provides the important capability to perform …

We present a kinetic model for carbon incorporation during metalorganic vapor phase
epitaxy (MOVPE) of GaAs, using trimethylgallium (TMG) and either arsine (AsH 3) or …