The 2020 UV emitter roadmap

H Amano, R Collazo, C De Santi… - Journal of Physics D …, 2020 - iopscience.iop.org
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

First-principles calculations of electronic structure, optical and thermodynamic properties of GaBN2, Ga3BN4 and GaB3N4 nitrides

B Li, Y Duan, M Peng - Vacuum, 2023 - Elsevier
To further investigate the application of group III nitride materials in optoelectronics, the
phase stability, electronic structure, and optical and thermodynamic properties of GaBN 2 …

Structural and electronic properties of wurtzite BxAl1–xN from first‐principles calculations

M Zhang, X Li - physica status solidi (b), 2017 - Wiley Online Library
The structural and electronic properties of wurtzite BxAl1− xN (0≤ x≤ 1) are studied using
density functional theory. The change of lattice parameters with increased B composition …

Band bowing and the direct-to-indirect crossover in random BAlN alloys

JX Shen, D Wickramaratne, CG Van de Walle - Physical Review Materials, 2017 - APS
Boron-containing nitride alloys such as BAlN are being explored as novel members of the
nitride family of materials for electronic and optoelectronic applications. Using hybrid density …

Phase degradation in BxGa1− xN films grown at low temperature by metalorganic vapor phase epitaxy

BP Gunning, MW Moseley, DD Koleske… - Journal of Crystal …, 2017 - Elsevier
Using metalorganic vapor phase epitaxy, a comprehensive study of B x Ga 1− x N growth on
GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure …

[HTML][HTML] Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition

TB Tran, CH Liao, F AlQatari, X Li - Applied Physics Letters, 2020 - pubs.aip.org
Wurtzite BAlN alloys are emerging ultrawide bandgap III-nitride semiconductors promising
for optical and electronic devices. Yet the boron compositions of the grown alloys have been …

Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal‐Organic Vapor Phase Epitaxy

M Imura, Y Ota, RG Banal, M Liao… - … status solidi (a), 2018 - Wiley Online Library
To investigate the effect of boron (B) incorporation on the structural and optical properties of
aluminum nitride (AlN) layers, B‐doped AlN layers without columnar structures are grown on …

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

H Sun, F Wu, YJ Park, CH Liao, W Guo… - Applied Physics …, 2017 - iopscience.iop.org
We reveal the microstructure and dislocation behavior in 20-pair B 0.14 Al 0.86 N/Al 0.70 Ga
0.30 N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density …

Strain effects in wurtzite boron nitride: Elastic constants, internal strain, and deformation potentials from hybrid functional density functional theory

TP Sheerin, S Schulz - physica status solidi (RRL)–Rapid …, 2022 - Wiley Online Library
Boron‐containing III‐nitride heterostructures have recently attracted significant attention for
improving the efficiency of visible and UV light emitters. However, the fundamental material …